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Xiuling Li: Nanostructured Materials and Devices: Innovations for Electronic, Photonic, and Biomedical Applications
发布日期:2018-11-01  字号:   【打印

报告时间:2018年11月9日(星期五)14:30-15:30

报告地点:翡翠湖校区图书馆报告厅(一楼)

  Xiuling Li 教授

工作单位:University of Illinois at Urbana-Champaign

举办单位:电子科学与应用物理学院、微电子学院

报告人简介

Xiuling Li received her B.S. degree form Peking University and Ph.D. degree from the University of California at Los Angeles. Following post-doctoral positions at California Institute of Technology and University of Illinois, as well as industry experience at EpiWorks, Inc., she joined the faculty of the University of Illinois in 2007 in the Department of Electrical and Computer Engineering. She was promoted to Associate Professor with tenure in 2012, and to Professor and Willett Faculty Scholar in 2015. She has published >138 journal papers and holds >20+ patents in the area of semiconductor materials and devices. She is a Fellow of IEEE and APS. Her other honors and awards include NSF CAREER award, DARPA Young Faculty Award, ONR Young Investigator Award. She currently serves as a Deputy Editor of Applied Physics Letters and Vice President for Finance and Administration of the IEEE Photonics Society.

报告简介

My group's general interests are in the area of semiconductor materials and devices. We focus on developing innovative structures and device concepts through both bottom-up and top-down approaches to bring lasting impact to the field of nanotechnology, electronics, and photonics; and possibly medicine. I will give a brief overview of several recent nanotechnologies developed at Illinois. 

(1) I will first introduce a bottom-up growth method to realize monolithic 3D III-V HEMTs using MOCVD grown planar nanowire arrays with record fT/fmax. 

(2) I will then present an unorthodox anisotropic wet etching method, metal-assisted chemical etching (MacEtch), that enables site-controlled semiconductor nanostructure top-down fabrication with unprecedented aspect ratio and versatility. Several examples of devices uniquely enabled by MacEtch will be discussed, include ultra-high aspect ratio (40:1) InP junctionless FinFETs with excellent subthreshold slope (63 mV/dec), InGaAs nanopillar array MOSCAPs with low Dit, and Ge and Ga2O3 nanotextured photodiodes with enhanced responsivity.  

(3) Using a bottom-up and top-down combined approach, we have established a 3D self-rolled-up membrane (S-RuM) nanotechnology platform for extreme miniaturization of passive electronic components for radio frequency integrated circuits (RFICs) and power electronics applications. I will discuss the design, fabrication, and performance of S-RuM based inductors and transformers, as well as using S-RuM tubes as an active conformal interface to guide and accelerate neuron cell growth.

(鲁迎春/文)  
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